Top-down pathways to devices with few and single atoms placed to high precision

Abstract

Solid-state devices that employ few and single atoms are emerging as a consequence of technological advances in classical microelectronics and proposals for quantum computers based on spin or charge. The fabrication of devices in both these areas requires the development of techniques for deterministic doping of silicon where few or single dopant atoms must be placed to, typically, nanometre precision. Here we discuss a top-down approach, based on deterministic ion implantation, which can potentially be used to fabricate devices intended to explore the novel challenges of designing, building and measuring solid-state devices at the single atom limit. In particular, we address the potential o..